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2SC2655 датащит (Datasheet) 1 Page - Toshiba Semiconductor

№ деталь 2SC2655
подробность  Silicon NPN Epitaxial Type (PCT Process)
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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2SC2655
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1020.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)




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