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1SS417 датащи(PDF) 1 Page - Toshiba Semiconductor |
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1SS417 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS417 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.56V (typ.) • Low reverse current: IR = 5μA (Max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P * 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.28 ― VF (2) ― IF = 10mA ― 0.36 ― Forward voltage VF (3) ― IF = 50mA ― 0.56 0.62 V Reverse current IR ― VR = 40V ― ― 5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 15 ― pF Equivalent Circuit (Top View) Marking JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.6mg(typ.) Unit: mm X 0.1±0.05 0.48 +0.02 -0.03 A 0.07 M A 0.6±0.05 0.2 ±0.05 fSC |
Аналогичный номер детали - 1SS417 |
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Аналогичное описание - 1SS417 |
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