2SK2145

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK2145

Audio Frequency Low Noise Amplifier Applications

• Including two devices in SM5 (super mini type with 5 leads.)

• Low noise: NF = 1.0dB (typ.)

Marking

(Q1, Q2 common)

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

−50

V

Gate current

10

mA

Drain power dissipation

(Note 1)

300

mW

Junction temperature

125

°C

Storage temperature

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3L1C

Weight: 0.016 g (typ.)