поискавой системы для электроныых деталей |
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2SK2232 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SK2232 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2232 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 12 A — 0.057 0.08 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 12 A — 0.036 0.046 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 12 A 10 16 — S Input capacitance Ciss — 1000 — Reverse transfer capacitance Crss — 200 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 550 — pF Rise time tr — 20 — Turn−on time ton — 30 — Fall time tf — 55 — Switching time Turn−off time toff — 130 — ns Total gate charge (Gate−source plus gate–drain) Qg — 38 — Gate−source charge Qgs — 25 — Gate−drain (“miller”) charge Qgd VDD ≈ 48 V, VGS = 10 V, ID = 25 A — 13 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 25 A Pulse drain reverse current (Note 1) IDRP — — — 100 A Forward voltage (diode) VDSF IDR = 25 A, VGS = 0 V — — −1.8 V Reverse recovery time trr — 50 — ns Reverse recovered charge Qrr IDR = 25 A, VGS = 0 V, dIDR / dt = 50 A / μs — 35 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2232 Part No. (or abbreviation code) |
Аналогичный номер детали - 2SK2232_06 |
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Аналогичное описание - 2SK2232_06 |
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