2SK2700

2006-11-10

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII)

2SK2700

Chopper Regulator, DC–DC Converter and Motor Drive

Applications

Low drain–source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain–source voltage

900

V

900

V

Gate–source voltage

±30

V

DC

(Note 1)

3

A

Drain current

Pulse (Note 1)

9

A

Drain power dissipation (Tc = 25°C)

40

W

Single pulse avalanche energy

(Note 2)

295

mJ

Avalanche current

3

A

Repetitive avalanche energy (Note 3)

4

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

3.125

°C / W

Thermal resistance, channel to

ambient

62.5

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)