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2SK2700 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SK2700
подробное описание детали  Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2700 датащи(HTML) 2 Page - Toshiba Semiconductor

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2SK2700
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gate–source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut–off current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain–source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain–source ON resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
3.7
4.3
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 1.5 A
0.65
2.6
S
Input capacitance
Ciss
750
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
70
pF
Rise time
tr
15
Turn–on time
ton
55
Fall time
tf
30
Switching time
Turn–off time
toff
110
ns
Total gate charge (gate–source
plus gate–drain)
Qg
25
Gate–source charge
Qgs
13
Gate–drain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 3 A
12
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
3
A
Pulse drain reverse current
(Note 1)
IDRP
9
A
Forward voltage (diode)
VDSF
IDR = 3 A, VGS = 0 V
−1.9
V
Reverse recovery time
trr
1100
ns
Reverse recovery charge
Qrr
IDR = 3 A, VGS = 0 V
dIDR / dt = 100 A / μs
7.2
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2700
Part No. (or abbreviation code)


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