2SK2718

2006-11-10

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2718

DC−DC Converter and Motor Drive Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

900

V

900

V

Gate−source voltage

±30

V

DC

(Note 1)

2.5

A

Drain current

Pulse (Note 1)

7.5

A

Drain power dissipation (Tc = 25°C)

40

W

Single pulse avalanche energy

(Note 2)

216

mJ

Avalanche current

2.5

A

Repetitive avalanche energy (Note 3)

4.0

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

3.125

°C / W

Thermal resistance, channel to

ambient

62.5

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)