2SK3074_07 datasheet(2/4 Pages) TOSHIBA

номер детали	2SK3074

подробное описание детали	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SK3074

2007-11-01

2

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Output Power

PO

630

—

mW

Drain Efficiency

ηD

45

—

%

Power Gain

GP

VDS = 9.6V

Iidle = 50mA (VGS = adjust)

f = 520MHz, Pi = 20mW

14.9

—

dB

Gate Threshold Voltage

Vth

VDS = 9.6V, ID = 0.5mA

1.4

1.9

2.4

V

Drain Cut-off Current

IDSS

VDS = 20V, VGS = 0

—

10

μA

Gate-Source Leakage Current

IGSS

VGS = 10V, VDS = 0

—

5

μA

Note 2: These characteristic values are measured using measurement tools specified by Toshiba.

RF OUTPUT POWER TEST FIXTURE

Аналогичный номер детали - 2SK3074_07

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Toshiba Semiconductor	2SK3074	112Kb / 3P	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
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Аналогичное описание - 2SK3074_07

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SK3075	168Kb / 4P	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
	2SK3075	115Kb / 3P	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
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New Japan Radio	NJM2275	214Kb / 11P	VHF/UHF BAND RF AMPLIFIER
STMicroelectronics	STAC4932B	299Kb / 13P	HF/VHF/UHF RF power N-channel MOSFET Rev 8 - April 2020

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2SK3074 датащи(PDF) 2 Page - Toshiba Semiconductor

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Аналогичный номер детали - 2SK3074_07

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