2SK3417 datasheet(2/6 Pages) TOSHIBA

номер детали	2SK3417

подробное описание детали	Silicon N Channel MOS Type Switching Regulator Applications

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK3417

2006-11-06

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

⎯

±10

μA

Drain-source breakdown voltage

V (BR) GSS

IG = ±100 μA, VDS = 0 V

±30

⎯

V

Drain cut-OFF current

IDSS

VDS = 500 V, VGS = 0 V

⎯

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

⎯

1.6

1.8

Ω

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID = 2.5 A

2.5

4.0

⎯

S

Input capacitance

Ciss

⎯

780

⎯

Reverse transfer capacitance

Crss

⎯

60

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

200

⎯

pF

Rise time

tr

⎯

12

⎯

Turn-ON time

ton

⎯

25

⎯

Fall time

tf

⎯

15

⎯

Switching time

Turn-OFF time

toff

⎯

60

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

17

⎯

Gate-source charge

Qgs

⎯

11

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 400 V, VGS = 10 V, ID = 5 A

⎯

6

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

⎯

5

A

Pulse drain reverse current

(Note 1)

IDRP

⎯

20

A

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

⎯

−1.7

V

Reverse recovery time

trr

⎯

60

⎯

ns

Reverse recovery charge

Qrr

IDR = 5 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯

0.1

⎯

μC

Marking

Duty <= 1%, tw = 10 μs

0 V

10 V

VGS

RL = 90 Ω

VDD ∼− 225 V

ID = 2.5 A

VOUT

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K3417

Part No. (or abbreviation code)

Аналогичный номер детали - 2SK3417

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SK3417	245Kb / 6P	Switching Regulator Applications
Toshiba Semiconductor	2SK3417	1Mb / 73P	Bipolar Small-Signal Transistors
Inchange Semiconductor ...	2SK3417B	400Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	2SK3417K	326Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - 2SK3417

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