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2SK3567 датащит (Datasheet) 1 Page - Toshiba Semiconductor

№ деталь 2SK3567
подробность  Silicon N Channel MOS Type Switching Regulator Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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2SK3567
2006-11-08
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3567
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3.5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
14
A
Drain power dissipation (Tc
= 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
201
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.57
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 28.8 mH, IAR = 3.5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2




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