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2SK3569 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SK3569 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3569 2006-11-08 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.54 0.75 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5 A 0.7 8.5 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 15 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 180 ⎯ pF Rise time tr ⎯ 22 ⎯ Turn-on time ton ⎯ 50 ⎯ Fall time tf ⎯ 36 ⎯ Switching time Turn-off time toff ⎯ 180 ⎯ ns Total gate charge Qg ⎯ 42 ⎯ Gate-source charge Qgs ⎯ 23 ⎯ Gate-drain charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 10 A ⎯ 19 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 40 A Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1300 ⎯ ns Reverse recovery charge Qrr IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC Marking RL = 40 Ω 0 V 10 V VGS VDD ∼− 200 V ID = 5 A VOUT 50 Ω Duty <= 1%, tw = 10 μs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3569 Part No. (or abbreviation code) |
Аналогичный номер детали - 2SK3569_06 |
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Аналогичное описание - 2SK3569_06 |
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