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TC7SG34FU датащи(PDF) 1 Page - Toshiba Semiconductor |
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TC7SG34FU датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TC7SG34FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG34FU NON-Inverter Features • High-level output current: IOH/IOL = ±8 mA (min) at VCC = 3.0 V • High-speed operation: tpd = 2.3 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9~3.6 V • 5.5-V tolerant input. • 3.6-V power down protection output. Marking Pin Assignment (top view) Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0V Note 2: High or Low State. IOUT abusolute maximum rating must be observed. Note 3: VOUT < GND Weight: 0.006 g (typ.) Characteristics Symbol Value Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~7.0 V −0.5~ 4.6 (Note 1) DC output voltage VOUT −0.5~ VCC + 0.5 (Note 2) V Input diode current IIK −20 mA Output diode current IOK −20 (Note 3) mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg −65~150 °C Product name W F NC IN A GND 1 2 3 5 4 VCC OUT Y |
Аналогичный номер детали - TC7SG34FU |
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Аналогичное описание - TC7SG34FU |
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