TLP251F

2007-10-01

1

TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP251F

Inverter for Air Conditioner

Induction Heating

Transistor Inverter

Power MOSFET Gate Drive

IGBT Gate Drive

The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and

an integrated photodetector.

This unit is 8−lead DIP package.

TLP251F is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.

(~15A)

• Supply current: 11mA (max.)

• Supply voltage: 10~35V

• Output peak current: ±0.4A (max.)

• UL recognized: UL1577, file no. E67349

• Option (D4) type

VDE approved: DIN EN 60747-5-2, certificate no. 40011913

(Note 1) When a EN 60747-5-2 approved type is needed,

please designate the “ Option (D4) ”

• Structural parameter

Creepage distance: 8.0mm (min.)

Clearance: 8.0mm (min.)

Unit in mm

TOSHIBA

11

−10C402

Weight: 0.54g