STB20NM60T4 datasheet(5/18 Pages) STMICROELECTRONICS

номер детали	STB20NM60T4

подробное описание детали	N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

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STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60

Electrical characteristics

5/18

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 10 A

RG = 4.7Ω VGS = 10 V

(see Figure 15)

25

20

42

11

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

20

80

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

ISD = 20 A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =20A, di/dt=100A/µs,

VDD = 60 V

(see Figure 20)

390

5

25

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =20A, di/dt=100A/µs,

Tj = 150°C, VDD = 60 V

(see Figure 20)

510

6.5

26

ns

µC

A

Аналогичный номер детали - STB20NM60T4

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB20NM60T4	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

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Аналогичное описание - STB20NM60T4

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STF15NM65N	499Kb / 18P	N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STB12NM60N	591Kb / 18P	N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
	STB15NM60N	607Kb / 18P	N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
	STF19NM65N	532Kb / 19P	N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET
	STP21NM50N	463Kb / 18P	N-channel 500V - 0.15廓 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh??Power MOSFET
	STP14NK60Z	623Kb / 19P	N-channel 600V - 0.45廓 - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET
	STP21NM60N	672Kb / 16P	N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
	STP20NM60	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
	STP12NM50	544Kb / 17P	N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET
	STB21NM50N	633Kb / 16P	N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

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STB20NM60T4 датащи(PDF) 5 Page - STMicroelectronics

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Аналогичный номер детали - STB20NM60T4

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