поискавой системы для электроныых деталей |
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74LVQ32T датащи(PDF) 4 Page - STMicroelectronics |
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74LVQ32T датащи(HTML) 4 Page - STMicroelectronics |
4 / 8 page CAPACITIVE CHARACTERISTICS Symb ol Parameter Test Co nditi ons Valu e Un it VCC (V) TA =25 oC -40 to 85 oC Min. T yp. Max. Mi n. Max. CIN Input Capacitance 3.3 4 pF CPD Power Dissipation Capacitance (note 1) 3.3 fIN = 10 MHz 15 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN +ICC/4(per gate) AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr =tf =3 ns) Symb ol Parameter T est Con ditio n Valu e Un it VCC (V) TA =25 oC -40 to 85 oC Min. T yp. Max. Mi n. Max. tPLH tPHL Propagation Delay Time 2.7 6.0 12.0 14.0 ns 3.3 (*) 5.0 9.0 10.0 tOSLH tOSHL Output to Output Skew Time (note 1, 2) 2.7 0.5 1.0 1.0 ns 3.3 (*) 0.5 1.0 1.0 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW (tOSLH =|tPLHm -tPLHn|, tOSHL =|tPHLm -tpHLn|) 2) Parameter guaranteed by design (*) Voltage range is 3.3V ± 0.3V 74LVQ32 4/8 |
Аналогичный номер детали - 74LVQ32T |
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Аналогичное описание - 74LVQ32T |
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