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FDS8672S датащи(PDF) 6 Page - Fairchild Semiconductor |
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FDS8672S датащи(HTML) 6 Page - Fairchild Semiconductor |
6 / 7 page www.fairchildsemi.com 6 ©2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 Figure 14. FDS8672S SyncFET Body Diode TIME: 12.5nS/Div Reverse Recovery Characteristics Figure 15. 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 TJ = 125oC TJ = 100oC TJ = 25oC V DS, REVERSE VOLTAGE (V) SyncFET Body Diode Reverse Leakage vs Drain to Source Voltage Typical Characteristics T J = 25°C unless otherwise noted SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDS8672S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. |
Аналогичный номер детали - FDS8672S |
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Аналогичное описание - FDS8672S |
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