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FDS8672S датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8672S датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page www.fairchildsemi.com 2 ©2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 10mA, referenced to 25°C 33 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1mA 1.0 2.1 3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 10mA, referenced to 25°C -5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 18A 3.8 4.8 m Ω VGS = 4.5V, ID = 15A 5.3 7.0 VGS = 10V, ID = 18A, TJ = 125°C 5.3 7.8 gFS Forward Transconductance VDS = 5V, ID = 18A 78 S Dynamic Characteristics Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 2005 2670 pF Coss Output Capacitance 985 1310 pF Crss Reverse Transfer Capacitance 135 205 pF Rg Gate Resistance f = 1MHz 0.6 2.0 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 15V, ID = 18A, VGS = 10V, RGEN = 6Ω 12 22 ns tr Rise Time 4 10 ns td(off) Turn-Off Delay Time 26 42 ns tf Fall Time 3 10 ns Qg Total Gate Charge VGS = 0V to 10V VDD = 15V, ID = 18A 29 41 nC Qg Total Gate Charge VGS = 0V to 5V 15 21 nC Qgs Gate to Source Charge 5.5 nC Qgd Gate to Drain “Miller” Charge 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 18A 0.8 1.2 V VGS = 0V, IS = 1.8A 0.4 0.7 trr Reverse Recovery Time IF = 18A, di/dt = 300A/µs 27 43 ns Qrr Reverse Recovery Charge 31 50 nC NOTES: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad. |
Аналогичный номер детали - FDS8672S |
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Аналогичное описание - FDS8672S |
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