BUZ10 datasheet(2/8 Pages) STMICROELECTRONICS

номер детали	BUZ10

подробное описание детали	N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.0

62. 5

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Valu e

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

10

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =30 V)

150

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

50

V

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tj =125

oC

1

10

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

nA

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS

ID =1 mA

2. 1

3

4

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V

ID = 14 A

0.06

0.07

Ω

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS =25 V

ID =14 A

6

11

S

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

900

130

40

pF

SWITCHING

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on Time

Rise Time

Turn-off Delay T ime

Fall T ime

VDD =30 V

ID =10 A

RGS =4.7

Ω

VGS =10 V

20

45

48

10

ns

BUZ10

2/8

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