поискавой системы для электроныых деталей |
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BTA202X-800D датащи(PDF) 3 Page - NXP Semiconductors |
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BTA202X-800D датащи(HTML) 3 Page - NXP Semiconductors |
3 / 12 page BTA202X_SER_D_E_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 3 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C Table 3. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aac112 0 1 2 3 0 0.4 0.8 1.2 1.6 2 IT(RMS) (A) Ptot (W) α= 180° 120 ° 90 ° 60 ° 30 ° conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α 003aac110 0 4 8 12 16 20 1 10 10 2 10 3 number of cycles ITSM (A) ITSM t IT Tj(init) = 25 °C max 1/f |
Аналогичный номер детали - BTA202X-800D |
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Аналогичное описание - BTA202X-800D |
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