BUK7510-55AL datasheet(6/14 Pages) PHILIPS

номер детали	BUK7510-55AL

подробное описание детали	N-channel TrenchMOS standard level FET

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6 / 14 page

BUK7510-55AL_2

Product data sheet

Rev. 02 — 3 January 2008

6 of 14

NXP Semiconductors

BUK7510-55AL

N-channel TrenchMOS standard level FET

IDSS

drain leakage current

VDS =55V; VGS =0V;

Tj = 175 °C

--

500

μA

VDS =55V; VGS =0V; Tj =25 °C

-

0.05

10

μA

IGSS

gate leakage current

VDS =0V; VGS =+20 V;

Tj =25 °C

-2

100

nA

VDS =0V; VGS =-20 V;

Tj =25 °C

-2

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A;

Tj = 175 °C; see Figure 12 and

13

--

20

m

Ω

VGS =10V; ID =25A; Tj =25 °C;

see Figure 12 and 13

-8.5

10

m

Ω

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25 °C;

see Figure 16

-0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = -100 A/μs;

VGS =0V; VDS =30V; Tj =25 °C

-73

-

ns

Qr

recovered charge

IS =20A; dIS/dt = -100 A/μs;

VGS =0V; VDS =30V; Tj =25 °C

-430

-nC

Dynamic characteristics

QG(tot)

total gate charge

ID =25A; VDS =44V;

VGS =10V; Tj =25 °C;

see Figure 14

-124

-nC

QGS

gate-source charge

ID =25A; VDS =44V;

VGS =10V; Tj =25 °C;

see Figure 14

-22

-

nC

QGD

gate-drain charge

ID =25A; VDS =44V;

VGS =10V; Tj =25 °C;

see Figure 14

-50

-

nC

VGS(pl)

gate-source plateau

voltage

ID =25A; VDS =44V; Tj =25 °C;

see Figure 14

-5

-V

Ciss

input capacitance

VGS =0V; VDS =25V;

f=1MHz; Tj =25 °C;

see Figure 15

-

4710

6280

pF

Coss

output capacitance

VGS =0V; VDS =25V;

f=1MHz; Tj =25 °C;

see Figure 15

-

980

1180

pF

Crss

reverse transfer

capacitance

VGS =0V; VDS =25V;

f=1MHz; Tj =25 °C;

see Figure 15

-

560

770

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω;

VGS =10V; RG(ext) =10 Ω;

Tj =25 °C

-33

-

ns

tr

rise time

VDS =30V; RL =1.2 Ω;

VGS =10V; RG(ext) =10 Ω;

Tj =25 °C

-117

-ns

Table 6.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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