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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC857C датащи(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC857C датащи(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  BL Galaxy Electrical Production specification NPN general purpose Transistor BC856/857/858 Document number: BL/SSSTC044 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BC856 BC857 BC858 V(BR)CBO IC=-10μA,IE=0 -80 -50 -30 V Collector-emitter breakdown voltage BC856 BC857 BC858 V(BR)CEO IC=-10mA,IB=0 B -65 -45 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -1 -15 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain BC856A,857A,858A BC856B,857B,858B BC857C,858C hFE VCE=-5V,IC=-2mA 125 220 420 250 475 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-5mA B IC=-10mA, IB=-0.5mA B -0.65 -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-5mA B -1.1 V collector capacitance Cc VCB=-10V,IE=Ie=0 f=1MHz 4.5 pF Transition frequency fT VCE=-5V, IC= -10mA f=100MHz 100 MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Аналогичный номер детали - BC857C |
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Аналогичное описание - BC857C |
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