J108 datasheet(3/6 Pages) VISHAY

номер детали	J108

подробное описание детали	N-Channel JFETs

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J/SST108 Series

Vishay Siliconix

Document Number: 70231

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-3

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

40

–55

25

125

32

24

16

8

0

–15

85

–35

5

45

65

105

20

0

–8

–10

–4

8

4

0

50

20

10

0

1

10

100

1000

800

400

200

0

16

12

600

40

30

–2

–6

5

0

–6

–8

–10

4

3

2

1

0

30

015

20

10

525

24

18

12

6

0

–2

–4

100

06

8

10

40

20

0

80

60

24

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

On-Resistance vs. Drain Current

Turn-On Switching

Turn-Off Switching

On-Resistance vs. Temperature

Output Characteristics

VGS(off) – Gate-Source Cutoff Voltage (V)

ID – Drain Current (mA)

TA – Temperature (_C)

VDS – Drain-Source Voltage (V)

VGS(off) – Gate-Source Cutoff Voltage (V)

ID – Drain Current (mA)

rDS @ ID = 10 mA, VGS = 0 V

IDSS @ VDS = 15 V, VGS = 0 V

IDSS

rDS

TA = 25_C

VGS(off) = –2 V

–4 V

–8 V

VGS(off) = –2 V

–4 V

–8 V

ID = 10 mA

rDS changes X 0.7%/_C

V

GS

= 0 V

tr approximately independent of ID

VDD = 1.5 V, RG = 50 Ω

VGS(L) = –10 V

td(on) @ ID = 25 mA

td(on) @ ID = 10 mA

tr

td(off)

VGS(off) = –2 V

td(off) independent

of device VGS(off)

VDD = 1.5 V, VGS(L) = –10 V

VGS(off) = –8 V

–0.4 V

–0.6 V

–0.8 V

–0.2 V

VGS(off) = –2 V

tf

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NXP Semiconductors	J108	45Kb / 7P	N-channel silicon junction FETs 1996 Jul 30
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