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STI15NM65N датащи(PDF) 4 Page - STMicroelectronics |
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STI15NM65N датащи(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V dv/dt (1) 1. Characteristics value at turn off on inductive load Drain source voltage slope Vdd=520 V, Id=15.5 A, Vgs=10 V 30 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 7.75 A 0.25 0.27 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS=15 V, ID =7.75 A 15 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 1900 110 10 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0 V, VDS = 0V to 520 V 230 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 15.5 A, VGS = 10 V, (see Figure 19) 55 9 30 nC nC nC |
Аналогичный номер детали - STI15NM65N |
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Аналогичное описание - STI15NM65N |
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