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STP20NM50FP датащи(PDF) 3 Page - STMicroelectronics

номер детали STP20NM50FP
подробное описание детали  N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP20NM50FP датащи(HTML) 3 Page - STMicroelectronics

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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK / I²PAK
TO-220
TO-220FP
VDS
Drain source voltage
500
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
20
20 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
12.6
12.6 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
80
80 (1)
A
PTOT
Total dissipation at TC = 25°C
192
45
W
Derating factor
1.54
0.36
W/°C
dv/dt (3)
3.
ISD < 20A, di/dt < 400A/µs, VDD < V(BR)DSS, TJ < TJMAX
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-65 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK / I²PAK
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case max
0.65
2.8
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
10
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID= 5A, VDD= 50V)
650
mJ


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