STI30NM60ND datasheet(5/15 Pages) STMICROELECTRONICS

номер детали	STI30NM60ND

подробное описание детали	N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

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STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND

Electrical characteristics

5/15

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

25

100

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 25A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 25A, VDD = 60V

di/dt=100A/µs

(see Figure 4)

TBD

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 25A,VDD = 60V

di/dt=100A/µs,

TJ = 150°C

(see Figure 4)

TBD

ns

µC

A

Аналогичный номер детали - STI30NM60ND

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STI30NM60ND	798Kb / 18P	N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

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Аналогичное описание - STI30NM60ND

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STX30NM60ND	798Kb / 18P	N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
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