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SI91871DMP-12-T1 датащи(PDF) 3 Page - Vishay Siliconix |
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SI91871DMP-12-T1 датащи(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Si91871 Vishay Siliconix Document Number: 72012 S-51147—Rev. F, 20-Jun-05 www.vishay.com 3 SPECIFICATIONS Limits −40 to 85_C Tempa Test Conditions Unless Specified TA = 25_C, VIN = VOUT(nom) + 1 V IOUT = 1 mA, CIN = 2 mF, COUT = 2.0 mF VSD = 1.5 V Parameter Unit Maxb Typc Minb Tempa Test Conditions Unless Specified TA = 25_C, VIN = VOUT(nom) + 1 V IOUT = 1 mA, CIN = 2 mF, COUT = 2.0 mF VSD = 1.5 V Symbol Output Noise Voltage eN VNOM = 2.6 V, BW = 10 Hz to 100 kHz, 0 mA t IOUT t 300 mA, CNOISE = 0.01 mF Room 30 mV(rms) f = 1 kHz Room 60 Ripple Rejection DVOUT/DVIN IOUT = 300 mA f = 10 kHz Room 40 dB pp j OUT IN OUT f = 100 kHz Room 30 Dynamic Line Regulation DVO(line) VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V tr/tf = 2 ms, IOUT = 300 mA Room 20 mV Dynamic Load Regulation DVO(load) IOUT : 1 mA to 300 mA, tr/tf = 2 ms Room 20 mV Thermal Shutdown Junction Temperature TJ(S/D) Room 150 _C Thermal Hysteresis THYST Room 20 C Reverse current IR VIN = −6.0 V Room 1 mA Short Circuit Current ISC VOUT = 0 V Room 700 mA Shutdown Shutdown Supply Current ICC(off) VSD = 0 V Room 0.1 1 mA SD Pin Input Voltage VSD High = Regulator ON (Rising) Full 1.5 VIN V SD Pin Input Voltage VSD Low = Regulator OFF (Falling) Full 0.4 V Auto Discharge Resistance R_DIS Room 100 W SD Pin Input Currentf IIN(SD) VSD = 1.5 V, VIN = 6 V Room 0.7 mA SD Hysteresis VHYST(SD) Full 150 mV VOUT Turn-On Time tON VSD (See Figure 1), ILOAD = 100 nA 50 ms Notes a. Room = 25_C, Full = −40 to 85_C. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical values for dropout voltage at VOUT w 2 V are measured at VOUT = 3.3 V, while typical values for dropout voltage at VOUT < 2 V are measured at VOUT = 1.8 V. d. Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V differential, provided that VIN does not not drop below 2.0 V. e. Ground current is specified for normal operation as well as “drop-out” operation. f. The device’s shutdown pin includes a typical 2-MW internal pull-down resistor connected to ground. g. VOUT(nom) is VOUT when measured with a 1-V differential to VIN. TIMING WAVEFORMS FIGURE 1. Timing Diagram for Power-Up VSD 0.95 VNOM VOUT VNOM tON 0 V VIN tr v 1 ms |
Аналогичный номер детали - SI91871DMP-12-T1 |
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Аналогичное описание - SI91871DMP-12-T1 |
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