TRANSCOM
TC2182
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
79
January 2002
Low Noise Ceramic Packaged PHEMT GaAs FETs
FEATURES
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain:
Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 160 µm
• 100 % DC Tested
• Micro-X Metal Ceramic Package
DESCRIPTION
The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with
TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that
makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure
consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
10
13
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
40
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
55
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.32mA
-0.5
-1.0
-2.0
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO = 0.08mA
59
Volts
Rth
Thermal Resistance
130
°C/W
ABSOLUTE MAXIMUM RATINGS (TA=25
°°°°C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
5.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
160
µA
Pin
RF Input Power, CW
14 dBm
PT
Continuous Dissipation
150 mW
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25
°°°°C)
VDS = 2 V, IDS = 10 mA
Γopt
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
2
0.32
19.0
0.98
15
0.40
4
0.33
17.4
0.84
30
0.35
6
0.35
15.7
0.68
50
0.26
8
0.39
14.3
0.51
76
0.19
10
0.44
12.9
0.38
107
0.12
12
0.50
11.9
0.28
146
0.08
14
0.58
11.4
0.25
-167
0.07
16
0.74
11.2
0.32
-110
0.11
18
0.91
10.9
0.49
-43
0.23
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