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STB4NC60 датащи(PDF) 3 Page - STMicroelectronics |
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STB4NC60 датащи(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STB4NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300V, ID = 2A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 14 ns tr Rise Time 14 ns Qg Total Gate Charge VDD = 480V, ID = 4A, VGS = 10V 16.5 23.1 nC Qgs Gate-Source Charge 2.5 nC Qgd Gate-Drain Charge 9 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 4.2A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 15 ns tf Fall Time 19 ns tc Cross-over Time 24 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4.2 A ISDM (2) Source-drain Current (pulsed) 16.8 A VSD (1) Forward On Voltage ISD = 4.2A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 600 ns Qrr Reverse Recovery Charge 2.7 µC IRRM Reverse Recovery Current 9 A Safe Operating Area Thermal Impedance |
Аналогичный номер детали - STB4NC60 |
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Аналогичное описание - STB4NC60 |
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