поискавой системы для электроныых деталей |
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STB60NE06-16 датащи(PDF) 3 Page - STMicroelectronics |
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STB60NE06-16 датащи(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD =30 V ID =30 A RG =4.7 Ω VGS =10 V 40 125 60 180 ns ns (di/ dt )on Turn-on Current Slope VDD =48 V ID =60 A RG =47 Ω VGS =10 V 280 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =48 V ID =60 A VGS = 10 V 115 25 40 160 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =48 V ID =60 A RG =4.7 Ω VGS =10 V 15 150 180 25 210 260 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 60 240 A A VSD ( ∗) Forward On Voltage ISD =60 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/ dt = 100 A/ µs VDD =30 V Tj =150 oC 100 0.4 8 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB60NE06-16 3/9 |
Аналогичный номер детали - STB60NE06-16 |
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Аналогичное описание - STB60NE06-16 |
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