STB9NB50 datasheet(2/8 Pages) STMICROELECTRONICS

номер детали	STB9NB50

подробное описание детали	N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

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THERMAL DATA

Rthj-ca se

Rthj- amb

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

T yp

Maximum Lead Temperature For Soldering Purpose

1

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limited by Tj max,

δ <1%)

8.6

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

520

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =250

µAVGS =0

500

V

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =125

oC

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

±100

nA

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate Threshold

Voltage

VDS =VGS

ID =250

µA

3

45V

RDS( on)

St atic Drain-source On

Resistance

VGS =10 V

ID = 4.3 A

0. 75

0.85

Ω

ID(o n)

On St ate Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

8. 6

A

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconduct ance

VDS >ID(on) xRDS(on)max

ID =4.3 A

4. 5

5.7

S

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse T ransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

1250

175

20

1625

236

27

pF

STB9NB50

2/8

Аналогичный номер детали - STB9NB50

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET
VBsemi Electronics Co.,...	STB9NB60	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET

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