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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STD16NE06L-1 датащи(PDF) 1 Page - STMicroelectronics |
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STD16NE06L-1 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STD16NE06L-1 N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET ™ " POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.07 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size ™ " strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalanche charac- teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS ® INTERNAL SCHEMATIC DIAGRAM July 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 o C16 A ID Drain Current (continuous) at Tc = 100 oC11 A IDM( •) Drain Current (pulsed) 64 A Ptot Total Dissipation at Tc = 25 oC40 W Derating Factor 0.3 W/ oC dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID STD16NE06L-1 60 V < 0.085 Ω 16 A 3 2 1 DPAK TO-251 (Suffix "T4") 1/5 |
Аналогичный номер детали - STD16NE06L-1 |
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Аналогичное описание - STD16NE06L-1 |
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