STD20NE03L datasheet(1/9 Pages) STMICROELECTRONICS

номер детали	STD20NE03L

подробное описание детали	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

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STD20NE03L

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE

™ ” POWER MOSFET

s

TYPICAL RDS(on) = 0.016

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE A 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

SGS-THOMSON unique ”Single Feature Size

™ ”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

December 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

30

V

VGS

Gate-source Voltage

± 15

V

ID

Drain Current (continuous) at Tc =25

oC

20**

A

ID

Drain Current (continuous) at Tc =100

oC

20**

A

IDM(

•)

Drain Current (pulsed)

100

A

Pto t

Total Dissipation at Tc =25

oC50

W

Derat ing Fact or

0.33

W/

oC

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ ns

Tst g

St orage Temperature

-65 to 175

oC

Tj

Max. Operating Junction T emperat ure

175

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 40 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(**) Value limited only by the package

TYPE

VDSS

RDS(on )

ID

ST D20NE03L

30 V

< 0. 020

Ω

20 A

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/9

Аналогичный номер детали - STD20NE03L

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD20NE06	96Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

More results

Аналогичное описание - STD20NE03L

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB60NE06-16	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
	STP16NE06L	70Kb / 7P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET
	STB80NE06-10	94Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
	STP55NE06	120Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
	STP80NE06-10	92Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
	STD20NE06	96Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET
	STP60NE03L-10	99Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
	STB55NE06	98Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET
	STB55NE06L	55Kb / 5P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
	STB60NE03L-10	99Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

More results

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