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STP3NB60 датащи(PDF) 1 Page - STMicroelectronics

номер детали STP3NB60
подробное описание детали  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3NB60 датащи(HTML) 1 Page - STMicroelectronics

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STP12NB30
STP12NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
™ MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.34
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
has
designed
an
advanced
family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY(UPS)
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
January 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
ST P12NB30
ST P12NB30FP
VDS
Drain-source Volt age (VGS =0)
300
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
300
V
VGS
Gat e-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
o C12
6.5
A
ID
Drain Current (continuous) at Tc =100
oC7.5
4
A
IDM(
•)
Drain Current (pulsed)
48
48
A
Ptot
Tot al Dissipation at Tc =25
oC125
35
W
Derating F act or
1
0. 28
W/
oC
dv/dt(1)
Peak Diode Recovery voltage slope
5.5
5.5
V/ ns
VISO
Insulat ion Withstand Volt age (DC)
2000
V
Tstg
Storage T emperat ure
-65 to 150
oC
Tj
Max. O perating Junction Temperature
150
oC
TYPE
VDSS
RDS(on)
ID
STP3NB60
STP12NB30F P
300 V
300 V
<0.40
<0.40
12A
6.5 A
1/6


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