STP2NA50FI datasheet(1/6 Pages) STMICROELECTRONICS

номер детали	STP2NA50FI

подробное описание детали	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STP2NA50

STP2NA50FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 3.25

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

s

MEDIUM CURRENT, HIGH SPEED

SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

CONSUMER AND INDUSTRIAL LIGHTING

INTERNAL SCHEMATIC DIAGRAM

T YPE

VDSS

RDS(o n)

ID

ST P2NA50

ST P2NA50FI

500 V

<4

Ω

< 4 Ω

2.8 A

2A

March 1996

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

STP2NA50

STP2NA50F I

VDS

Drain-Source Voltage (Vgs = 0)

500

V

VDGR

Drain-Gate Volt age (Rgs =20 K

Ω)

500

V

VGS

Gate-Source Voltage

± 30

V

ID

Drain-Current (continuous) at Tc =25

oC2.8

2

A

ID

Drain-Current (continuous) at Tc =100

oC1.8

1.25

A

IDM(

•)

Drain-Current (Pulsed)

11.2

A

Ptot

Tot al Dissipation at Tc =25

oC75

35

W

Derat ing Factor

0.6

0.28

W/

oC

VISO

Insulation W ithst and Voltage (DC)

-

4000

V

Tstg

Storage T emperature

-65 to 150

oC

Tj

Max Operating Junction T emperature

150

oC

(

•)Pulse width limited by safe operating area

1

2

3

TO-220

ISOWATT220

1

2

3

1/6

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