поискавой системы для электроныых деталей |
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STP3NA90FI датащи(PDF) 3 Page - STMicroelectronics |
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STP3NA90FI датащи(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on T ime Rise Time VDD =450 V ID =1.5 A RG =4.7 Ω VGS =10 V 10 10 15 15 ns ns (di/ dt)on Turn-on Current Slope VDD =720 V ID =3 A RG =47 Ω VGS =10 V 360 A/ µs Qg Qgs Qgd Total Gat e Charge Gate-Source Charge Gate-Drain Charge VDD =720 V ID =3 A VGS =10 V 35 6 14 50 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall T ime Cross-over T ime VDD =720 V ID =3 A RG =4.7 Ω VGS =10 V 11 8 19 10 13 26 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD ( ∗)Forward On Voltage ISD =3 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100 A/ µs VDD =100 V Tj =150 oC 950 14. 2 30 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP3NA90/FI 3/6 |
Аналогичный номер детали - STP3NA90FI |
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Аналогичное описание - STP3NA90FI |
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