поискавой системы для электроныых деталей |
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STA500 датащи(PDF) 4 Page - STMicroelectronics |
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STA500 датащи(HTML) 4 Page - STMicroelectronics |
4 / 11 page STA500 4/11 ABSOLUTE MAXIMUM RATINGS THERMAL DATA Symbol Parameter Value Unit VCE DC Supply Voltage (Pin 4,7,12,15) 40 V Vmax Maximum Voltage on pins (23 to 32) 5.5 V Top Operating Temperature Range 0 to 70 °C Tstg, Tj Storage and Junction Temperature -40 to 150 °C Symbol Parameter Min. Typ. Max. Unit Tj-case Thermal Resistance Junction to Case (thermal pad) 2.5 °C/W TjSD Thermal shut-down junction temperature 150 °C Twarn Thermal warning temperature 130 °C thSD Thermal shut-down hysteresis 25 °C ELECTRICAL CHARACTERISTCS (Ibias = 3.3V; Vcc = 28V; Tamb = 25°C unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit RdsON Power Pchannel/Nchannel MOSFET RdsON Id=1A; 200 270 m Ω Idss Power Pchannel/Nchannel leakage Idss Vcc=35V 50 µA gN Power Pchannel RdsON Matching (*) Id=1A 95 % gP Power Nchannel RdsON Matching (*) Id=1A 95 % Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1 10 20 ns Dt_d High current Dead Time (dinamic) L=22 µH; C = 470nF; Rl = 8Ω Id = 3.5A; see fig. 3 50 ns td ON Turn-on delay time Resistive load 100 ns td OFF Turn-off delay time Resistive load 100 ns tr Rise time Resistive load; as fig. 1 25 ns tf Fall time Resistive load; as fig. 1 25 ns VCC Supply voltage operating voltage 9 VOV V VIN-H High level input voltage Ibias/2 +300mV V VIN-L Low level input voltage Ibias/2 -300mV V IIN-H Hi level Input current Pin voltage=Ibias 1 µA IIN-L Low level input current Pin voltage = 0.3V 1 µA IPWRDN-H Hi level PWRDN pin input current Ibias = 3.3V 35 µA VL Low logical state voltage VL (pin PWRDN, TRISTATE) (note 1) Ibias = 3.3V 0.8 V VH High logical state voltage VH (pin PWRDN, TRISTATE) (note 1) Ibias = 3.3V 1.7 V |
Аналогичный номер детали - STA500_06 |
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Аналогичное описание - STA500_06 |
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