STP4NA60FI datasheet(1/10 Pages) STMICROELECTRONICS

номер детали	STP4NA60FI

подробное описание детали	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STP4NA60

STP4NA60FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 1.85

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE GHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the

most advanced high voltage technology. The

optimized

cell

layout

coupled

with

a

new

proprietary edge termination concur to give the

device low RDS(on) and gate charge, unequalled

ruggedness and superior switching performance.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STP4NA60

STP4NA60FI

600 V

<2. 2

Ω

<2. 2

Ω

4.3 A

2.7 A

1

2

3

TO-220

ISOWATT220

November 1996

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

STP4NA60

STP4NA60FI

VDS

Drain-source Voltage (VGS =0)

600

V

VDG R

Drain-gate Volt age (RGS =20 k

Ω)600

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at T c =25

oC4.3

2.7

A

ID

Drain Current (cont inuous) at T c =100

oC2.8

1.8

A

IDM(

•)

Drain Current (pulsed)

17.2

A

Ptot

Total Dissipation at Tc =25

oC

100

40

W

Derating Factor

0.8

0.32

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)



2000

V

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1

2

3

1/10

Аналогичный номер детали - STP4NA60FI

производитель	номер детали	датащи	подробное описание детали
VBsemi Electronics Co.,...	STP4NA60FI	1Mb / 9P	N-Channel 650 V (D-S) MOSFET

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Аналогичное описание - STP4NA60FI

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD4NA40	169Kb / 10P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STE40NA60	46Kb / 5P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STP4NA40	198Kb / 10P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STB3NA60-1	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STP4NA90	236Kb / 5P	N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STP6NA60	206Kb / 10P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STU10NA50	73Kb / 5P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STP3NA60	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semi-Conduct...	STP6NA80	153Kb / 3P	N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semi-Conduct...	STH7NA80FI	154Kb / 3P	N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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