поискавой системы для электроныых деталей |
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FDS8878 датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS8878 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2007 Fairchild Semiconductor Corporation FDS8878 Rev. B www.fairchildsemi.com 3 Switching Characteristics (VGS = 10V) tON Turn-On Time VDD = 15V, ID = 10.2A VGS = 10V, RGS = 16Ω - - 54 ns td(ON) Turn-On Delay Time - 7 - ns tr Rise Time - 29 - ns td(OFF) Turn-Off Delay Time - 45 - ns tf Fall Time - 18 - ns tOFF Turn-Off Time - - 94 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 10.2A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 10.2A, dISD/dt = 100A/µs - - 19 ns QRR Reverse Recovered Charge ISD = 10.2A, dISD/dt = 100A/µs - - 9.5 nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 10.7A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad. |
Аналогичный номер детали - FDS8878 |
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Аналогичное описание - FDS8878 |
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