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FDS9933BZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS9933BZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page tm March 2008 ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C www.fairchildsemi.com 1 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -4.9A, 46m Ω Features Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Battery Charging Load Switching MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±12 V ID Drain Current -Continuous TA = 25°C (Note 1a) -4.9 A -Pulsed -30 PD Power Dissipation (Note 1a) 1.6 W Power Dissipation (Note 1b) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 40 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity FDS9933BZ FDS9933BZ SO-8 330mm 12mm 2500 units Q1 Q2 Q2 Q1 Q1 Q2 Q2 Q1 G2 S1 G1 S2 D2 D2 D1 D1 Pin 1 D1 D1 D2 D2 S2 S1 G1 G2 SO-8 3 2 1 4 5 6 7 8 |
Аналогичный номер детали - FDS9933BZ |
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Аналогичное описание - FDS9933BZ |
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