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FDS9933BZ датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS9933BZ датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -20 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -9 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -0.4 -0.9 -1.5 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 3 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -4.9A 38 46 m Ω VGS = -2.5V, ID = -4.0A 54 69 VGS = -4.5V, ID = -4.9A, TJ = 125°C 52 67 gFS Forward Transconductance VDD = -10V, ID = -4.9A 17 S Dynamic Characteristics Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1MHz 740 985 pF Coss Output Capacitance 160 215 pF Crss Reverse Transfer Capacitance 145 220 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -10V, ID = -4.9A, VGS = -4.5V, RGEN = 6Ω 6.7 14 ns tr Rise Time 9.3 19 ns td(off) Turn-Off Delay Time 59 95 ns tf Fall Time 47 76 ns Qg Total Gate Charge VDD = -10V, ID = -4.9A VGS = -4.5V 11 15 nC Qgs Gate to Source Gate Charge 1.4 nC Qgd Gate to Drain “Miller” Charge 3.7 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Sourse Diode Forward Current -1.3 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.3A (Note 2) -0.8 -1.2 V trr Reverse Recovery Time IF = -4.9A, di/dt = 100A/µs 46 74 ns Qrr Reverse Recovery Charge 23 37 nC NOTES: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper b) 135°C/W when mounted on a minimun pad |
Аналогичный номер детали - FDS9933BZ |
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Аналогичное описание - FDS9933BZ |
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