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FDS4435BZ датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS4435BZ датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page www.fairchildsemi.com 4 ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C Figure 7. 0 5 10 15 20 25 30 0 2 4 6 8 10 I D = -8.8A VDD = -20V VDD = -10V Qg, GATE CHARGE(nC) VDD = -15V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1000 30 f = 1MHz VGS = 0V Crss Coss Ciss -VDS, DRAIN TO SOURCE VOLTAGE (V) 4000 Capacitance vs Drain to Source Voltage Figure9. 0.01 0.1 1 10 1 10 TJ = 25oC TJ = 125oC t AV, TIME IN AVALANCHE(ms) 30 20 Unclamped Inductive Switching Capability Figure 10. 0 5 10 15 20 25 30 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 TJ = 25oC TJ = 125oC VDS = 0V -VGS, GATE TO SOURCE VOLTAGE(V) Gate Leakage Current vs Gate to Source Voltage Figure 11. Maximum Continuous Drain Current vs Ambient Temperature 25 50 75 100 125 150 0 2 4 6 8 10 RθJA = 50 o C/W VGS = -4.5V VGS = -10V T A , AMBIENT TEMPERATURE ( o C ) Figure 12. 0.1 1 10 0.01 0.1 1 10 100 100us SINGLE PULSE TJ = MAX RATED RθJA = 125 o C/W TA = 25oC THIS AREA IS LIMITED BY r DS(on) 80 10s 1ms 10ms 100ms 1s DC -VDS, DRAIN to SOURCE VOLTAGE (V) Forward Bias Safe Operating Area Typical Characteristics T J = 25°C unless otherwise noted |
Аналогичный номер детали - FDS4435BZ |
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Аналогичное описание - FDS4435BZ |
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