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FDS4435BZ датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS4435BZ
подробное описание детали  P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to 25°C
-21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-2.1
-3
V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = -10V, ID = -8.8A
16
20
m
VGS = -4.5V, ID = -6.7A
26
35
VGS = -10V, ID = -8.8A, TJ = 125°C
22
28
gFS
Forward Transconductance
VDS = -5V, ID = -8.8A
24
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -15V, VGS = 0V,
f = 1MHz
1385
1845
pF
Coss
Output Capacitance
275
365
pF
Crss
Reverse Transfer Capacitance
230
345
pF
Rg
Gate Resistance
f = 1MHz
4.5
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6Ω
10
20
ns
tr
Rise Time
6
12
ns
td(off)
Turn-Off Delay Time
30
48
ns
tf
Fall Time
12
22
ns
Qg
Total Gate Charge
VGS = 0V to -10V
VDD = -15V,
ID = -8.8A
28
40
nC
Qg
Total Gate Charge
VGS = 0V to -5V
16
23
nC
Qgs
Gate to Source Charge
5.2
nC
Qgd
Gate to Drain “Miller” Charge
7.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -8.8A
(Note 2)
-0.9
-1.2
V
trr
Reverse Recovery Time
IF = -8.8A, di/dt = 100A/µs
29
44
ns
Qrr
Reverse Recovery Charge
23
35
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.


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