поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

FDS8876 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS8876
подробное описание детали  N-Channel PowerTrench짰 MOSFET 30V, 12.5A, 8.2m廓
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8876 датащи(HTML) 2 Page - Fairchild Semiconductor

  FDS8876_07 Datasheet HTML 1Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 2Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 3Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 4Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 5Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 6Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 7Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 8Page - Fairchild Semiconductor FDS8876_07 Datasheet HTML 9Page - Fairchild Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
©2007 Fairchild Semiconductor Corporation
FDS8876 Rev. B
www.fairchildsemi.com
2
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
12.5
A
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W)
11.4
A
Pulsed
91
A
EAS
Single Pulse Avalanche Energy (Note 1)
105
mJ
PD
Power dissipation
2.5
W
Derate above 25oC
20
mW/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 150
oC
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case (Note 2)
25
oC/W
RθJA
Thermal Resistance, Junction to Ambient (Note 2a)
50
oC/W
RθJA
Thermal Resistance, Junction to Ambient (Note 2b)
125
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS8876
FDS8876
SO-8
330mm
12mm
2500 units
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 24V
-
-
1
µA
VGS = 0V
TJ = 150oC
-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.2
-
2.5
V
rDS(on)
Drain to Source On Resistance
ID = 12.5A, VGS = 10V
-
6.8
8.2
m
ID = 11.4A, VGS = 4.5V
-
8.3
10.2
ID = 12.5A, VGS = 10V,
TJ = 150oC
-
10.9
14.1
Dynamic Characteristics
CISS
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
-
1650
-
pF
COSS
Output Capacitance
-
330
-
pF
CRSS
Reverse Transfer Capacitance
-
180
-
pF
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
0.6
2.3
4.0
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
VDD = 15V
ID = 12.5A
Ig = 1.0mA
-
28
36
nC
Qg(5)
Total Gate Charge at 5V
VGS = 0V to 5V
-
15
20
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
1.5
2.0
nC
Qgs
Gate to Source Gate Charge
-
4.3
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
2.8
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.0
-
nC


Аналогичный номер детали - FDS8876_07

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS8876_NL FAIRCHILD-FDS8876_NL Datasheet
262Kb / 12P
   N-Channel PowerTrench MOSFET
More results

Аналогичное описание - FDS8876_07

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDB8160 FAIRCHILD-FDB8160 Datasheet
329Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 80A, 1.8m廓
FDD8896 FAIRCHILD-FDD8896_12 Datasheet
1Mb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 94A, 5.7m廓
FDD8880 FAIRCHILD-FDD8880_08 Datasheet
503Kb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓
logo
ON Semiconductor
FDS8984-F085 ONSEMI-FDS8984-F085 Datasheet
485Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 7A, 23m廓
September-2017, Rev. 1
logo
Fairchild Semiconductor
FDMS8662 FAIRCHILD-FDMS8662 Datasheet
210Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 49A, 2.0m廓
FDD8870_F085 FAIRCHILD-FDD8870_F085_13 Datasheet
319Kb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
FDP8896 FAIRCHILD-FDP8896_08 Datasheet
474Kb / 10P
   N-Channel PowerTrench짰 MOSFET 30V, 92A, 5.9m廓
FDB8132 FAIRCHILD-FDB8132 Datasheet
338Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 80A, 1.6m廓
FDB8870 FAIRCHILD-FDB8870_10 Datasheet
223Kb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
FDMS8680 FAIRCHILD-FDMS8680 Datasheet
215Kb / 6P
   N-Channel PowerTrench짰 MOSFET 30V, 35A, 7.0m廓
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com