поискавой системы для электроныых деталей |
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FDS6670AS датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6670AS датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDS6670AS Rev A 2 (X) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.5 0.6 0.7 V trr Diode Reverse Recovery Time 20 nS Qrr Diode Reverse Recovery Charge IF = 13.5A, diF/dt = 300 A/µs (Note 3) 15 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. |
Аналогичный номер детали - FDS6670AS_08 |
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Аналогичное описание - FDS6670AS_08 |
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