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FDS6675BZ датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS6675BZ
подробное описание детали  P-Channel PowerTrench짰 MOSFET
Download  6 Pages
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6675BZ датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS6675BZ Rev. B1
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25°C
-20
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-2
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to
25°C
15.7
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = -10V , ID = -11A
10.8
13.0
m
VGS = -4.5V, ID = -9A
17.4
21.8
VGS = -10V, ID = -11A
TJ = 125oC
15.0
18.8
gFS
Forward Transconductance
VDS = -5V,
ID = -11A
34
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -15V, VGS = 0V,
f = 1MHz
1855
2470
pF
Coss
Output Capacitance
335
450
pF
Crss
Reverse Transfer Capacitance
330
500
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
VDD = -15V, ID = -11A
VGS = -10V, RGS = 6Ω
3.0
10
ns
tr
Rise Time
7.8
16
ns
td(off)
Turn-Off Delay Time
120
200
ns
tf
Fall Time
60
100
ns
Qg
Total Gate Charge
VDS = -15V, VGS = -10V,
ID = -11A
44
62
nC
Qg
Total Gate Charge
VDS = -15V, VGS = -5V,
ID = -11A
25
35
nC
Qgs
Gate to Source Gate Charge
7.2
nC
Qgd
Gate to Drain Charge
11.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
-0.7
-1.2
V
trr
Reverse Recovery Time
IF = -11A, di/dt = 100A/µs
42
ns
Qrr
Reverse Recovery Charge
IF = -11A, di/dt = 100A/µs
30
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
minimun pad
c) 125°C/W when
mounted on a
b)105°C/W when
mounted on a .04 in2
pad of 2 oz copper


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