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FDS6679AZ датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS6679AZ
подробное описание детали  P-Channel PowerTrench짰 MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6679AZ датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS6679AZ Rev. B1
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25°C
-20
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS=0V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS=0V
±10
µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-1.9
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to
25°C
6.5
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = -10V, ID = -13A
7.7
9.3
m
VGS = -4.5V, ID = -11A
11.8
14.8
VGS = -10V, ID = -13A,
TJ = 125°C
10.7
13.4
gFS
Forward Transconductance
VDS = -5V, ID = -13A
55
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -15V, VGS = 0V,
f = 1MHz
2890
3845
pF
Coss
Output Capacitance
500
665
pF
Crss
Reverse Transfer Capacitance
495
745
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6Ω
13
24
ns
tr
Rise Time
15
27
ns
td(off)
Turn-Off Delay Time
210
336
ns
tf
Fall Time
92
148
ns
Qg
Total Gate Charge
VDS = -15V, VGS = -10V,
ID = -13A
68
96
nC
Qg
Total Gate Charge
VDS = -15V, VGS = -5V,
ID = -13A
38
54
nC
Qgs
Gate to Source Gate Charge
10
nC
Qgd
Gate to Drain Charge
17
nC
Drain-Source Diode Characteristic
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
-0.7
-1.2
V
trr
Reverse Recovery Time
IF = -13A, di/dt = 100A/µs
40
ns
Qrr
Reverse Recovery Charge
IF = -13A, di/dt = 100A/µs
-31
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300
µs, Duty Cycle <2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b)105°C/W when
mounted on a .04 in2
pad of 2 oz copper
minimun pad
c) 125°C/W when
mounted on a


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