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FDD6680AS датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDD6680AS датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2008 Fairchild Semiconductor Corporation FDD6680AS Rev A1(X) FDD6680AS 30V N-Channel PowerTrench ® SyncFET ™ General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode. Applications • DC/DC converter • Low side notebook Features • 55 A, 30 V RDS(ON) max= 10.5 mΩ @ VGS = 10 V RDS(ON) max= 13.0 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (21nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability . G S D TO-252 S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Unit s VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 3) 55 A – Pulsed (Note 1a) 100 Power Dissipation (Note 1) 60 (Note 1a) 3.1 PD (Note 1b) 1.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6680AS FDD6680AS 13’’ 16mm 2500 units tm April 2008 |
Аналогичный номер детали - FDD6680AS |
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Аналогичное описание - FDD6680AS |
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