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FDS8874 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8874 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2007 Fairchild Semiconductor Corporation FDS8874 Rev. B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 23A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad. Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TJ = 150oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(on) Drain to Source On Resistance ID = 16A, VGS = 10V - 4.9 5.5 m Ω ID = 15A, VGS = 4.5V - 5.6 7.0 ID = 16A, VGS = 10V, TJ = 150oC - 7.8 10.2 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 3000 3990 pF COSS Output Capacitance - 600 800 pF CRSS Reverse Transfer Capacitance - 350 525 pF RG Gate Resistance VGS = 0.5V, f = 1MHz 0.4 1.5 4.0 Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V V DD = 15V ID = 16A - 56 72 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 30 38 nC Qgs Gate to Source Gate Charge - 8.0 - nC Qgs2 Gate Charge Threshold to Plateau - 5.0 - nC Qgd Gate to Drain “Miller” Charge - 10 - nC tON Turn-On Time VDD = 15V, ID = 16A VGS = 10V, RGS = 4.7Ω - - 81 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 45 - ns td(OFF) Turn-Off Delay Time - 54 - ns tf Fall Time - 20 - ns tOFF Turn-Off Time - - 111 ns VSD Source to Drain Diode Voltage ISD = 16A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 16A, dISD/dt = 100A/µs - - 28 ns QRR Reverse Recovered Charge ISD = 16A, dISD/dt = 100A/µs - - 13 nC |
Аналогичный номер детали - FDS8874 |
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Аналогичное описание - FDS8874 |
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