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FDS5682 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS5682 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page ©2008 Fairchild Semiconductor Corporation FDS5682 Rev. A1 www.fairchildsemi.com 1 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21m Ω Features rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability Applications DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. SO-8 Branding Dash 1 5 2 3 4 4 3 2 1 5 6 7 8 May 2008 |
Аналогичный номер детали - FDS5682_08 |
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Аналогичное описание - FDS5682_08 |
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