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FDS6680AS датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS6680AS датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS6680AS Rev B 2(X) Typical Characteristics 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2 VDS, DRAIN-SOURCE VOLTAGE (V) 4.5V 4.0V 3.5V 3.0V VGS = 10V 6.0V 2.5V 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20304050 ID, DRAIN CURRENT (A) VGS = 3.0V 4.5V 6.0V 10.0V 4.0V 3.5V 5.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( oC) ID = 11.5A VGS = 10V 0 0.01 0.02 0.03 0.04 0.05 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 1 1.5 22.5 33.54 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC VDS = 5V -55 oC 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS6680AS_08 |
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Аналогичное описание - FDS6680AS_08 |
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